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Comparison of p+-n junction formed by BF2+ and B+ implantation in silicon microstrip detector with low and high thermal budget: impact of fluorine on electrical characteristics
Comparison of p+-n junction formed by BF2+ and B+ implantation in silicon microstrip detector with low and high thermal budget: impact of fluorine on electrical characteristics
Comparison of p+-n junction formed by BF2+ and B+ implantation in silicon microstrip detector with low and high thermal budget: impact of fluorine on electrical characteristics
Srivastava, A. K. (Autor:in) / Bhardwaj, A. (Autor:in) / Ranjan, K. (Autor:in) / Chatterji, S. (Autor:in) / Shivpuri, R. K. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 555-559
01.01.2003
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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