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Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon
Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon
Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon
Liang, J. H. (Autor:in) / Wu, C. H. (Autor:in)
APPLIED SURFACE SCIENCE ; 310 ; 230-234
01.01.2014
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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