Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer

Moscatelli, F. / Scorzoni, A. / Poggi, A. et al. | British Library Online Contents | 2005

Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC

Nipoti, R. / Mancarella, F. / Moscatelli, F. et al. | British Library Online Contents | 2011

Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC

Luo, Y. / Yan, F. / Tone, K. et al. | British Library Online Contents | 2000

Al^+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts

Nipoti, R. / Hallen, A. / Parisini, A. et al. | British Library Online Contents | 2013

Ohmic contacts to p-type InAs

Lysczek, E. M. / Robinson, J. A. / Mohney, S. E. | British Library Online Contents | 2006