High temperature annealing of Er implanted GaN

Alves, E. / Monteiro, T. / Soares, J. et al. | British Library Online Contents | 2001

Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap

Negoro, Y. / Katsumoto, K. / Kimoto, T. et al. | British Library Online Contents | 2004

Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions

Ohshima, T. / Uedono, A. / Itoh, H. et al. | British Library Online Contents | 2000

Diffusion of phosphorus implanted in germanium

Canneaux, T. / Mathiot, D. / Ponpon, J. P. et al. | British Library Online Contents | 2008

Influence of Annealing Conditions on Dopant Activation of Si^+ and Mg^+ Implanted GaN

Suvkhanov, A. / Parikh, N. / Usov, I. et al. | British Library Online Contents | 2000