Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing

Kosugi, R. / Kiritani, N. / Suzuki, K. et al. | British Library Online Contents | 2004

High temperature annealing of Er implanted GaN

Alves, E. / Monteiro, T. / Soares, J. et al. | British Library Online Contents | 2001

Electrical Activation of Implanted Phosphorus Ions in (0001)/(11&unknown;20)-Oriented 4H-SiC

Schmid, F. / Laube, M. / Pensl, G. et al. | British Library Online Contents | 2002

Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing

Wang, Y. / Losee, P. A. / Balachandran, S. et al. | British Library Online Contents | 2007

Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC

Senzaki, J. / Fukuda, K. / Arai, K. | British Library Online Contents | 2004