Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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Comparison of the Electrical Channel Properties between Dry- and Wet-Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
Comparison of the Electrical Channel Properties between Dry- and Wet-Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
Comparison of the Electrical Channel Properties between Dry- and Wet-Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
Laube, M. (Autor:in) / Pensl, G. (Autor:in) / Lee, K. K. (Autor:in) / Ohshima, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 1381-1384
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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