Hall Effect in the Channel of 3C-SiC MOSFETs

Krieger, M. / Pensl, G. / Bakowski, M. et al. | British Library Online Contents | 2005

Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation

Mortet, V. / Bedel-Pereira, E. / Bobo, J.F. et al. | British Library Online Contents | 2013

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

Chatty, K. / Banerjee, S. / Chow, T. P. et al. | British Library Online Contents | 2002

Hall Effect Measurements in SiC Buried-Channel MOS Devices

Saks, N. S. / Ryu, S. H. | British Library Online Contents | 2004

Piezoelectric Active-Sensor Failure Identification using Admittance Measurements

Park, G. / Askin, A. C. / Rutherford, A. C. et al. | British Library Conference Proceedings | 2005