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Comparison of the Electrical Channel Properties between Dry- and Wet-Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
Comparison of the Electrical Channel Properties between Dry- and Wet-Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
Comparison of the Electrical Channel Properties between Dry- and Wet-Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
Laube, M. (author) / Pensl, G. (author) / Lee, K. K. (author) / Ohshima, T. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 1381-1384
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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