Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy

Neudeck, P. G. / Powell, J. A. / Trunek, A. J. et al. | British Library Online Contents | 2002

Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas

Myers-Ward, R.L. / Nyakiti, L.O. / Hite, J.K. et al. | British Library Online Contents | 2011

Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas

Powell, J. A. / Neudeck, P. G. / Trunek, A. J. et al. | British Library Online Contents | 2005

Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas

Du, H. / Skowronski, M. / Neudeck, P. G. et al. | British Library Online Contents | 2006

High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

Spry, D. J. / Trunek, A. J. / Neudeck, P. G. | British Library Online Contents | 2004