Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas

Du, H. / Skowronski, M. / Neudeck, P. G. et al. | British Library Online Contents | 2006

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

Horii, T. / Miyazaki, T. / Saito, Y. et al. | British Library Online Contents | 2009

Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond

Teraji, T. / Koizumi, S. / Koide, Y. et al. | British Library Online Contents | 2008

Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas

Powell, J. A. / Neudeck, P. G. / Trunek, A. J. et al. | British Library Online Contents | 2005

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

Neudeck, P. G. / Powell, J. A. / Spry, D. J. et al. | British Library Online Contents | 2003