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Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
Abdou, F. (Autor:in) / Jacquier, C. (Autor:in) / Ferro, G. (Autor:in) / Cauwet, F. (Autor:in) / Monteil, Y. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 245-248
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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