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    Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism

    New search for: Abdou, F.
    New search for: Jacquier, C.
    New search for: Ferro, G.
    New search for: Cauwet, F.
    New search for: Monteil, Y.

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    Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism

    New search for: Abdou, F.
    New search for: Jacquier, C.
    New search for: Ferro, G.
    New search for: Cauwet, F.
    New search for: Monteil, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism

    New search for: Abdou, F.
    New search for: Jacquier, C.
    New search for: Ferro, G.
    New search for: Cauwet, F.
    New search for: Monteil, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism

    Contributors:

    Abdou, F. (author) / Jacquier, C. (author) / Ferro, G. (author) / Cauwet, F. (author) / Monteil, Y. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 457/460 ; 245-248

    Publication date:

    2004-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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