Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering: Fid-Bau Portal

Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering

Kurimoto, E. / Hangyo, M. / Harima, H. / Kisoda, K. / Nishiguchi, T. / Nishino, S. / Nakashima, S. / Katsuno, M. / Ohtani, N.

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Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering

Kurimoto, E. / Hangyo, M. / Harima, H. / Kisoda, K. / Nishiguchi, T. / Nishino, S. / Nakashima, S. / Katsuno, M. / Ohtani, N.

Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering

Kurimoto, E. / Hangyo, M. / Harima, H. / Kisoda, K. / Nishiguchi, T. / Nishino, S. / Nakashima, S. / Katsuno, M. / Ohtani, N.

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Title:

Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering

Contributors:

Kurimoto, E. (author) / Hangyo, M. (author) / Harima, H. (author) / Kisoda, K. (author) / Nishiguchi, T. (author) / Nishino, S. (author) / Nakashima, S. (author) / Katsuno, M. (author) / Ohtani, N. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 621-624

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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