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Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates
Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates
Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates
Zhang, M. (Autor:in) / Hobgood, H. M. (Autor:in) / Treu, M. (Autor:in) / Pirouz, P. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 759-762
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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