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Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance
Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance
Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance
Stesmans, A. (Autor:in) / Afanas'ev, V. V. (Autor:in) / Chen, F. (Autor:in) / Campbell, S. A. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 197-202
01.01.2004
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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