Simultaneous optical measurement of Germanium content and Boron doping in strained heteroepitaxial SiGe films using a novel data-analysis technique

Morris, S. J. / Fougeres, P. / Bozzo-Escoubas, S. et al. | British Library Online Contents | 2004

Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique

Morris, S. / Fougeres, P. / Bozzo-Escoubas, S. et al. | British Library Online Contents | 2005

Selective epitaxial growth of SiGe for strained Si transistors

Ning, X. J. / Gao, D. / Bonfanti, P. et al. | British Library Online Contents | 2006

Selective epitaxial growth of strained SiGe/Si for optoelectronic devices

Vescan, L. / Stoica, T. / Goryll, M. et al. | British Library Online Contents | 1998

Optical anisotropies in strained Si/SiGe systems

Olajos, J. / Engvall, J. / Grimmeiss, H. G. et al. | British Library Online Contents | 1996