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    Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation

    New search for: Iikawa, H.
    New search for: Nakao, M.
    New search for: Izumi, K.

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    Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation

    New search for: Iikawa, H.
    New search for: Nakao, M.
    New search for: Izumi, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation

    New search for: Iikawa, H.
    New search for: Nakao, M.
    New search for: Izumi, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation

    Contributors:

    Iikawa, H. (author) / Nakao, M. (author) / Izumi, K. (author)

    Published in:

    JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 19 ; 3607-3613

    Publication date:

    2004-01-01

    Size:

    7 pages

    ISSN:

    0884-2914

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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