Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Process integration of infrared-sensitive PIN photodiodes and CMOS transistors in a single-SiGe substrate
Process integration of infrared-sensitive PIN photodiodes and CMOS transistors in a single-SiGe substrate
Process integration of infrared-sensitive PIN photodiodes and CMOS transistors in a single-SiGe substrate
Nebrich, L. (Autor:in) / Neumeier, K. (Autor:in) / Stadler, A. (Autor:in) / Weber, J. (Autor:in) / Bensch, F. (Autor:in) / Kreuzer, S. (Autor:in) / Vogg, G. (Autor:in) / Herrmann, K. (Autor:in) / Klumpp, A. (Autor:in) / Wieland, R. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 429-433
01.01.2005
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
| British Library Online Contents | 1999
Lateral scaling challenges for SiGe NPN BiCMOS process integration
| British Library Online Contents | 2005
Highly Sensitive Infrared Temperature Sensor for CMOS Compatible Thermopiles
| British Library Online Contents | 2006
Selective epitaxial growth of SiGe for strained Si transistors
| British Library Online Contents | 2006
Materials and technology issues for SiGe heterojunction bipolar transistors
| British Library Online Contents | 2001