Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High Growth Rate (up to 20 mum/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
High Growth Rate (up to 20 mum/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
High Growth Rate (up to 20 mum/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
Zhang, J. (Autor:in) / Mazzola, J. (Autor:in) / Hoff, C. (Autor:in) / Koshka, Y. (Autor:in) / Casady, J. (Autor:in) / Nipoti, R. / Poggi, A. / Scorzoni, A.
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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