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A platform for research: civil engineering, architecture and urbanism
High Growth Rate (up to 20 mum/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
High Growth Rate (up to 20 mum/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
High Growth Rate (up to 20 mum/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
Zhang, J. (author) / Mazzola, J. (author) / Hoff, C. (author) / Koshka, Y. (author) / Casady, J. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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