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High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD
High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD
High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD
Myers, R. L. (Autor:in) / Shishkin, Y. (Autor:in) / Kordina, O. (Autor:in) / Haselbarth, I. (Autor:in) / Saddow, S. E. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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