Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH~3Cl Carbon Precursor
Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH~3Cl Carbon Precursor
Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH~3Cl Carbon Precursor
Lin, H. D. (Autor:in) / Wyatt, J. L. (Autor:in) / Koshka, Y. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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