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Homoepitaxial Growth of 4H-SiC Using CH~3Cl Carbon Precursor

Koshka, Y. / Lin, H. D. / Melnychuk, G. / Mazzola, M. S. / Wyatt, J. L.

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Homoepitaxial Growth of 4H-SiC Using CH~3Cl Carbon Precursor

Koshka, Y. / Lin, H. D. / Melnychuk, G. / Mazzola, M. S. / Wyatt, J. L.

Homoepitaxial Growth of 4H-SiC Using CH~3Cl Carbon Precursor

Koshka, Y. / Lin, H. D. / Melnychuk, G. / Mazzola, M. S. / Wyatt, J. L.

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Check availability in my library

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Document information

Title:

Homoepitaxial Growth of 4H-SiC Using CH~3Cl Carbon Precursor

Contributors:

Koshka, Y. (author) / Lin, H. D. (author) / Melnychuk, G. (author) / Mazzola, M. S. (author) / Wyatt, J. L. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 81-84

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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