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Epitaxial Growth of n-Type 4H-SiC on 3 Wafers for Power Devices
Epitaxial Growth of n-Type 4H-SiC on 3 Wafers for Power Devices
Epitaxial Growth of n-Type 4H-SiC on 3 Wafers for Power Devices
Thomas, B. (Autor:in) / Hecht, C. (Autor:in) / Nipoti, R. / Poggi, A. / Scorzoni, A.
01.01.2005
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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