Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes

Liu, J. Q. / Skowronski, M. / Hallin, C. et al. | British Library Online Contents | 2002

The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes

Harada, S. / Namikawa, Y. | British Library Online Contents | 2007

Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization

La Via, F. / Galvagno, G. / Firrincieli, A. et al. | British Library Online Contents | 2006

Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes

Wahab, Q. / Ellison, A. / Hallin, C. et al. | British Library Online Contents | 2000

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

Hasegawa, J. / Konishi, K. / Nakamura, Y. et al. | British Library Online Contents | 2014