Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes: Fid-Bau Portal

Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes

Fujiwara, H. / Kimoto, T. / Tojo, T. / Matsunami, H.

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Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes

Fujiwara, H. / Kimoto, T. / Tojo, T. / Matsunami, H.

Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes

Fujiwara, H. / Kimoto, T. / Tojo, T. / Matsunami, H.

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Title:

Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes

Contributors:

Fujiwara, H. (author) / Kimoto, T. (author) / Tojo, T. (author) / Matsunami, H. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 151-154

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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