Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates
Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates
Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates
Shimizu, H. (Autor:in) / Hisada, K. (Autor:in) / Aoyama, Y. (Autor:in) / Nipoti, R. / Poggi, A. / Scorzoni, A.
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates
British Library Online Contents | 2003
|Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD
British Library Online Contents | 2006
|Stress Evaluation on Hetero-Epitaxial 3C-SiC Films on (100) Si Substrates
British Library Online Contents | 2012
|British Library Online Contents | 2001
|British Library Online Contents | 2000
|