Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD
Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD
Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD
Shimizu, H. (Autor:in) / Aoyama, Y. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates
British Library Online Contents | 2003
|Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates
British Library Online Contents | 2005
|Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD
British Library Online Contents | 2007
|Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates
British Library Online Contents | 2004
|Stress Evaluation on Hetero-Epitaxial 3C-SiC Films on (100) Si Substrates
British Library Online Contents | 2012
|