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Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

Shimizu, H. / Hisada, K. / Aoyama, Y.

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Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

Shimizu, H. / Hisada, K. / Aoyama, Y.

Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

Shimizu, H. / Hisada, K. / Aoyama, Y.

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Check availability in my library

Order at Subito €

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Document information

Title:

Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

Contributors:

Shimizu, H. (author) / Hisada, K. (author) / Aoyama, Y. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 209-212

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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