High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

Sveinbjornsson, E. O. / Olafsson, H. O. / Gudjonsson, G. et al. | British Library Online Contents | 2005

3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

Kobayashi, M. / Uchida, H. / Minami, A. et al. | British Library Online Contents | 2011

High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment

Allerstam, F. / Gudjonsson, G. / Olafsson, H. O. et al. | British Library Online Contents | 2005

Effects of N~2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability

Fujihira, K. / Tarui, Y. / Ohtsuka, K. I. et al. | British Library Online Contents | 2005

2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

Perez-Tomas, A. / Placidi, M. / Baron, N. et al. | British Library Online Contents | 2010