High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Das, M. K. / Chung, G. Y. / Williams, J. R. et al. | British Library Online Contents | 2002

Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide

Yano, H. / Hatayama, T. / Uraoka, Y. et al. | British Library Online Contents | 2006

Characterization of POCl~3-Annealed 4H-Sic Mosfets by Charge Pumping Technique

Osawa, A. / Yano, H. / Hatayama, T. et al. | British Library Online Contents | 2013

Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

Ohshima, T. / Lee, K. K. / Ohi, A. et al. | British Library Online Contents | 2002

Laser-annealed deep ohmic contacts [2498-15]

Machac, P. / Myslik, V. / Vrnata, M. et al. | British Library Conference Proceedings | 1995