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Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide
Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide
Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide
Ohshima, T. (Autor:in) / Lee, K. K. (Autor:in) / Ohi, A. (Autor:in) / Yoshikawa, M. (Autor:in) / Itoh, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 1093-1096
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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