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Fabrication of 100nm gate length MOSFETs using a novel carbon nanotube-based nano-lithography
Fabrication of 100nm gate length MOSFETs using a novel carbon nanotube-based nano-lithography
Fabrication of 100nm gate length MOSFETs using a novel carbon nanotube-based nano-lithography
Derakhshandeh, J. (Autor:in) / Abdi, Y. (Autor:in) / Mohajerzadeh, S. (Autor:in) / Hosseinzadegan, H. (Autor:in) / Soleimani, E. A. (Autor:in) / Radamson, H. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 354-358
01.01.2005
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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