Fabrication of 100nm gate length MOSFETs using a novel carbon nanotube-based nano-lithography: Fid-Bau Portal

Fabrication of 100nm gate length MOSFETs using a novel carbon nanotube-based nano-lithography

Derakhshandeh, J. / Abdi, Y. / Mohajerzadeh, S. / Hosseinzadegan, H. / Soleimani, E. A. / Radamson, H.

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Fabrication of 100nm gate length MOSFETs using a novel carbon nanotube-based nano-lithography

Derakhshandeh, J. / Abdi, Y. / Mohajerzadeh, S. / Hosseinzadegan, H. / Soleimani, E. A. / Radamson, H.

Fabrication of 100nm gate length MOSFETs using a novel carbon nanotube-based nano-lithography

Derakhshandeh, J. / Abdi, Y. / Mohajerzadeh, S. / Hosseinzadegan, H. / Soleimani, E. A. / Radamson, H.

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Title:

Fabrication of 100nm gate length MOSFETs using a novel carbon nanotube-based nano-lithography

Contributors:

Derakhshandeh, J. (author) / Abdi, Y. (author) / Mohajerzadeh, S. (author) / Hosseinzadegan, H. (author) / Soleimani, E. A. (author) / Radamson, H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 354-358

Publication date:

2005-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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