Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy: Fid-Bau Portal

Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy

Kajikawa, Y. / Kobayashi, N. / Terasaki, H.

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Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy

Kajikawa, Y. / Kobayashi, N. / Terasaki, H.

Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy

Kajikawa, Y. / Kobayashi, N. / Terasaki, H.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy

Contributors:

Kajikawa, Y. (author) / Kobayashi, N. (author) / Terasaki, H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 126 ; 86-92

Publication date:

2006-01-01

Size:

7 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Lee, W. C. / Hsu, T. M. / Chyi, J.-I. et al. | British Library Online Contents | 1996

Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy

Buyanova, I. A. / Chen, W. M. / Monemar, B. et al. | British Library Online Contents | 2000

Applications of GaAs grown at a low temperature by molecular beam epitaxy

Mishra, U. K. | British Library Online Contents | 1993