Structural characterization of SiGe nanoclusters formed by rapid thermal annealing

dos Anjos, A. M. / Doi, I. / Diniz, J. A. | British Library Online Contents | 2008

TSUPREM-4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions

Sibaja-Hernandez, A. / Wei Xu, M. / Decoutere, S. et al. | British Library Online Contents | 2005

Boron diffusion in strained and strain-relaxed SiGe

Wang, C. C. / Sheu, Y. M. / Liu, S. et al. | British Library Online Contents | 2005

Sharp boron doping within thin SiGe layer by rapid thermal chemical vapour deposition

Tillack, B. / Ritter, G. / Krueger, D. et al. | British Library Online Contents | 1995

Volume and grain boundary diffusivity of boron in polycristalline silicon during rapid thermal annealing

Merabet, A. / Gontrand, C. | British Library Online Contents | 2003