Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials

Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials—some comments

Karunaratne, M. S. / Bonar, J. M. / Ashburn, P. / Willoughby, A. F.

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Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials—some comments

Karunaratne, M. S. / Bonar, J. M. / Ashburn, P. / Willoughby, A. F.

Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials—some comments

Karunaratne, M. S. / Bonar, J. M. / Ashburn, P. / Willoughby, A. F.

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Document information

Title:

Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials—some comments

Contributors:

Karunaratne, M. S. (author) / Bonar, J. M. (author) / Ashburn, P. (author) / Willoughby, A. F. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE ; 41 ; 1013-1016

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0022-2461

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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