Influence of CH~4/H~2 reactive ion etching on electrical and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures

Van Es, C. M. / Eijkemans, T. J. / Wolter, J. H. et al. | British Library Online Contents | 1995

Interface property of Mg-based dual ion implanted p^+-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs

Hara, N. / Suehiro, H. / Kuroda, S. | British Library Online Contents | 1997

New methods for the characterization of surface states density and substrate/epilayer interface states in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures

Mosser, V. / Callen, O. / Kobbi, F. et al. | British Library Online Contents | 1999

Characterization of Ni/Ge/Au/Ni/Au contact metallization on AlGaAs/InGaAs heterostructures for pseudomorphic heterojunction field effect transistor application

Lee, H. J. / Tse, M. S. / Radhakrishnan, K. et al. | British Library Online Contents | 1995

Donor passivation in pseudomorphic-high electron mobility transistors due to plasma-incorporated fluorine impurities observed using x-ray photoemission spectroscopy

Uchiyama, H. / Kikawa, T. / Taniguchi, T. et al. | British Library Online Contents | 2006