Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Phosphorous degassing from poly silicon under thermal exposure: A ToF-SIMS depth profile investigation
Phosphorous degassing from poly silicon under thermal exposure: A ToF-SIMS depth profile investigation
Phosphorous degassing from poly silicon under thermal exposure: A ToF-SIMS depth profile investigation
Alberici, S. G. (Autor:in) / Piagge, R. (Autor:in)
APPLIED SURFACE SCIENCE ; 252 ; 7272-7274
01.01.2006
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
SIMS depth profile analysis of sodium in silicon dioxide
| British Library Online Contents | 2008
Ti diffusion in chalcogenides: a ToF-SIMS depth profile characterization approach
| British Library Online Contents | 2004
SIMS depth profile of copper in low-k dielectrics under electron irradiation for charge compensation
| British Library Online Contents | 2003
Range evaluation in SIMS depth profiles of Er-implantations in silicon
| British Library Online Contents | 2005
Accurate SIMS depth profiling for ultra-shallow implants using backside SIMS
| British Library Online Contents | 2003