Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Characterization of GaN layers grown on silicon-on-insulator substrates
Characterization of GaN layers grown on silicon-on-insulator substrates
Characterization of GaN layers grown on silicon-on-insulator substrates
Tripathy, S. (Autor:in) / Wang, L. S. (Autor:in) / Chua, S. J. (Autor:in)
APPLIED SURFACE SCIENCE ; 253 ; 236-240
01.01.2006
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Characterization of GaN layers grown on porous silicon
British Library Online Contents | 2001
|Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
British Library Online Contents | 2001
|Strain in 3C-SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates
British Library Online Contents | 2009
|SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates
British Library Online Contents | 2009
|Activation and deactivation of phosphorus in silicon-on-insulator substrates
British Library Online Contents | 2016
|