Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing: Fid-Bau Portal

Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing

Kinoshita, A. / Katou, M. / Kawasaki, M. / Kojima, K. / Fukuda, K. / Arai, K. / Morigasa, F. / Endou, T. / Isii, T. / Yashima, T.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren

Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing

Kinoshita, A. / Katou, M. / Kawasaki, M. / Kojima, K. / Fukuda, K. / Arai, K. / Morigasa, F. / Endou, T. / Isii, T. / Yashima, T.

Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing

Kinoshita, A. / Katou, M. / Kawasaki, M. / Kojima, K. / Fukuda, K. / Arai, K. / Morigasa, F. / Endou, T. / Isii, T. / Yashima, T.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren

Dokumentinformationen

Titel:

Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing

Beteiligte:

Kinoshita, A. (Autor:in) / Katou, M. (Autor:in) / Kawasaki, M. (Autor:in) / Kojima, K. (Autor:in) / Fukuda, K. (Autor:in) / Arai, K. (Autor:in) / Morigasa, F. (Autor:in) / Endou, T. (Autor:in) / Isii, T. (Autor:in) / Yashima, T. (Autor:in)

Erschienen in:

Silicon Carbide and Related Materials - 2005 ; 835-838

MATERIALS SCIENCE FORUM ; 527/529

Erscheinungsdatum:

01.01.2006

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

Sugimoto, T. / Satoh, M. / Nakamura, T. et al. | British Library Online Contents | 2010

Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC

Giannazzo, F. / Roccaforte, F. / Salinas, D. et al. | British Library Online Contents | 2009

The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

Senzaki, J. / Fukuda, K. / Imai, S. et al. | British Library Online Contents | 2000

Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap

Negoro, Y. / Katsumoto, K. / Kimoto, T. et al. | British Library Online Contents | 2004

Impurity Contamination and Diffusion during Annealing in Implanted ZnO

Sakaguchi, I. / Adachi, Y. / Ogaki, T. et al. | British Library Online Contents | 2009

Nach oben