A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH~3Cl Carbon Precursor
Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH~3Cl Carbon Precursor
Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH~3Cl Carbon Precursor
Lin, H. D. (author) / Wyatt, J. L. (author) / Koshka, Y. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Homoepitaxial Growth of 4H-SiC Using CH~3Cl Carbon Precursor
| British Library Online Contents | 2005
Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor
| British Library Online Contents | 2006
Homoepitaxial Growth of Al-Doped 4H-SiC using Bis-Trimethylsilylmethane Precursor
| British Library Online Contents | 2004
Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor
| British Library Online Contents | 2002
Homoepitaxial growth kinetics in the presence of a Schwoebel barrier
| British Library Online Contents | 2000