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Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD
Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD
Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD
Shimizu, H. (Autor:in) / Kato, A. (Autor:in) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.
01.01.2007
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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