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Electron-beam-induced current imaging for the characterisation of structural defects in Si1-xGex films grown by LE-PECVD
Electron-beam-induced current imaging for the characterisation of structural defects in Si1-xGex films grown by LE-PECVD
Electron-beam-induced current imaging for the characterisation of structural defects in Si1-xGex films grown by LE-PECVD
Virtuani, A. (Autor:in) / Marchionna, S. (Autor:in) / Acciarri, M. (Autor:in) / Isella, G. (Autor:in) / von Kaenel, H. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 798-801
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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