Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
An Approach to Model Temperature Effects of Interface Traps in 4H-SiC
An Approach to Model Temperature Effects of Interface Traps in 4H-SiC
An Approach to Model Temperature Effects of Interface Traps in 4H-SiC
Rao, R. (Autor:in) / Balaji, S. (Autor:in) / Matocha, K. (Autor:in) / Tilak, V. (Autor:in) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.
01.01.2007
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Effect of interface traps on Debye thickness semiconductor films
British Library Online Contents | 2006
|British Library Online Contents | 2014
|British Library Online Contents | 2014
|British Library Online Contents | 2007
|Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC
British Library Online Contents | 2009
|