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Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation
Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation
Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation
Storasta, L. (Autor:in) / Tsuchida, H. (Autor:in) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.
01.01.2007
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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