Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface

Miyazaki, S. / Tamura, T. / Ogasawara, M. et al. | British Library Online Contents | 2000

Detection of interface states correlated with SiO2/Si(111) interface structures

Watanabe, N. / Teramoto, Y. / Omura, A. et al. | British Library Online Contents | 2000

Ultrathin SiO2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO2/Si interface for crystalline Si solar cells

Matsumoto, Taketoshi / Nakajima, Hiroki / Irishika, Daichi et al. | British Library Online Contents | 2017

Ultrathin SiO2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO2/Si interface for crystalline Si solar cells

Matsumoto, Taketoshi / Nakajima, Hiroki / Irishika, Daichi et al. | British Library Online Contents | 2017

XPS analysis of carrier trapping phenomena in ultrathin SiO2 film formed on Si substrate

Hirose, K. / Kawashiri, S. / Hattori, T. | British Library Online Contents | 2004