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45nm CMOS technology with low temperature selective epitaxy of SiGe
45nm CMOS technology with low temperature selective epitaxy of SiGe
45nm CMOS technology with low temperature selective epitaxy of SiGe
Tamura, N. (Autor:in) / Shimamune, Y. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 6067-6071
01.01.2008
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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