Low-temperature selective epitaxy of silicon with chlorinated chemistry by RTCVD

Ribot, P. / Dutartre, D. | British Library Online Contents | 2002

SiGe nanostructures by selective epitaxy and self-assembling

Vescan, L. | British Library Online Contents | 2001

Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD

Li, Jiun-Yun / Sturm, James C. / Majumdar, A. et al. | IEEE | 2009

45nm CMOS technology with low temperature selective epitaxy of SiGe

Tamura, N. / Shimamune, Y. | British Library Online Contents | 2008

Bulk and surface properties of RTCVD Si~3N~4 films for optical device applications

Lebland, F. / Wang, Z. Z. / Flicstein, J. et al. | British Library Online Contents | 1993