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45nm CMOS technology with low temperature selective epitaxy of SiGe

Tamura, N. / Shimamune, Y.

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45nm CMOS technology with low temperature selective epitaxy of SiGe

Tamura, N. / Shimamune, Y.

45nm CMOS technology with low temperature selective epitaxy of SiGe

Tamura, N. / Shimamune, Y.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

45nm CMOS technology with low temperature selective epitaxy of SiGe

Contributors:

Tamura, N. (author) / Shimamune, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 6067-6071

Publication date:

2008-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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